Presentation 31,32,33
Presentation 31
Organic Materials, Processing, And Devices
Prog, Nir Tessler
Technion
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Organic electronics are drawing attention towards applications ranging from high to low end products.Such potential markets are the full color emissive displays, electronic paper, and disposable smart tags. In this presentation we will describe a new bio-mimetic family of semiconducting polymers(electronic peptides), a new processing that allows for direct photolithographic-type patterning oflight-emitting polymers, and a transistor device that has the potential to drive a flexible emissivescreen. These three topics are chosen to demonstrate the key features of organic electronics which
are:
1. Innovative material approach can light up our imagination and open new opportunities.
2. These materials can already be used in small screens and have the potential to be very low cost.
3. These are not regular semiconductors and hence the device structure has to be designed
accordingly.
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Presentation 32
Nano Technology - Semiconductors And Novel Materiai Devices
Dr.Valery Garber, Emanuel Baskin, and Alex Fayer
D.C.Sirica Ltd.
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The rapid growth of the passive night vision IR camera market is largely limited by camera cost,of which the IR detector is the single most expensive component. High-end applications require very expensive photon detectors that operate at cryogenic temperatures and must be vacuum packed. Lower-end applications can n0W be achieved by lower-cost, lower-performance thermal
detectors that still require vacuum packaging. Yet, cost and maintenance of cameras based on thermal detectors still pose a barrier to mass market applications.
Sirica presents a new approach enabling photon (quantum) IR detection at room temperature, eliminating the need for cooling and vacuum packaging, thus, achieving the superior performance equivalent to photon detectors at prices significantly lower than l0W performance thermal detectors.This breakthrough is based on novel silicon-based material that enables the formation of non-equilibrium free carriers that can be maintained long enough to absorb IR photons and release corresponding photoluminescence in the visible or NIR range that could be easily detected by aregular CMOS/CCD imager.
Experimental results showing photo-induced free carrier IR absorption and IR - induced photoluminescence, and the schematic mode of operation of the device will be presented.
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http://www.sirica.com/index.files/slide0001.htm
CMOS/CCD http://plusd.itmedia.co.jp/mobile/articles/0408/05/news052.html
NIR http://www.nic.ad.jp/ja/basics/terms/nir.html
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Presentation 33
Indium Phosphide Electoronics For High Speed And Optoelectronic Intergration
Prof.Dan Ritter
Technion
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Indium phosphide based transistors hold the speed records of both bipolar and filed effect transistors.In addition, they can be monolithically integrated with optoelectronic devices operating at 1.55microns. This talk will review world status of this technology and the activity at Technion.
